e/Floating Gate MOSFET

Information
has gloss	eng: The Floating Gate MOSFET (FGMOS) is a field effect transistor, whose structure is similar to a conventional MOSFET. The gate of the FGMOS is electrically isolated, creating a floating node in DC, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is completely surrounded by highly resisitve material, the charge contained in it remains unchanged for long periods of time. Usually Fowler-Nordheim Tunneling and Hot-Carrier Injection mechanisms are used in order to modify the amount of charge stored in the FG.
lexicalization	eng: Floating Gate MOSFET
instance of	(noun) a semiconductor device capable of amplification junction transistor, electronic transistor, transistor

Meaning
German
has gloss	deu: Ein Floating-Gate-Transistor ist ein spezieller Transistor, welcher in nichtflüchtigen Speichern zur permanenten Informationspeicherung eingesetzt wird. Er wurde 1967 von D. Kahng und S.M. Sze in den Bell Laboratories entwickelt und stellt in integrierten Schaltungen bei den heute üblichen Flash-Speichern, EPROMs und EEPROMs das elementare Speicherelement dar.
lexicalization	deu: Floating-Gate-Transistor
Russian
has gloss	rus: Транзи́стор с пла́вающим затво́ром — разновидность транзистора, используемая, обычно, в различных устройствах энергонезависимой памяти: флэш-памяти, ППЗУ и ПППЗУ. Транзисторы с плавающим затвором чаще всего являются полевыми МОП-транзисторами.
lexicalization	rus: Транзистор с плавающим затвором

Media
media:img	FGMOS Symbol.svg
media:img	Floating gate transistor.png