| Information | |
|---|---|
| has gloss | eng: Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current that flows between the source and drain of a MOSFET when the transistor is in the subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The subthreshold region is often referred to as the weak inversion region. The terminology for various degrees of inversion is described in Tsividis. |
| lexicalization | eng: subthreshold conduction |
| lexicalization | eng: Subthreshold Leakage |
| instance of | (noun) a semiconductor device capable of amplification junction transistor, electronic transistor, transistor |
| Meaning | |
|---|---|
| German | |
| has gloss | deu: Bei subthreshold leakage (dt. »Unterschwellspannungsleckstrom«) handelt es sich um einen so genannten Leckstrom in MOS-Transistoren, welche in aktuellen integrierten Schaltungen wie Prozessoren oder Mikrocontrollern verwendet werden. |
| lexicalization | deu: Subthreshold Leakage |
| Italian | |
| has gloss | ita: La corrente di sottosoglia è un fenomeno che riguarda il funzionamento dei MOSFET nella regione sottosoglia, consistente nella formazione di una debole corrente tra il source e il drain. |
| lexicalization | ita: corrente di sottosoglia |
| Media | |
|---|---|
| media:img | Diffusion (1).png |
| media:img | FET subthreshold leakage.png |
| media:img | Lateral mosfet.svg |
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